For Etching Si using Bosch switched processing for vertical profiles. For Etching Si using non-switched processing for tapered profiles. The Electro-Static Clamping Chuck enables good wafer clamping, less wafer bowing compared with mechanical clamping, and wafer-less chamber cleaning. Chuck temperature from -20°C to + 40°C. […]
Inductively Coupled Plasma Reactor that is used for Reactive Ion Etch. High plasma density, low operating pressure, high etch rate, excellent etch uniformity and low energy ion damage. Temperature to be controlled from 5 to 30oC. Restricted to etch silicon-based materials, which include Si, SiO2, […]
Topside(TSA) and Backside(BSA) alignment. Achievable exposure resolution ~1 um, alignment resolution ~ 1.5um. Only 6” wafer. Able to perform soft, hard, low vacuum and vacuum contact, as well as proximity exposure. Restricted to positive-tone photoresists (for this system only).
Quantum Dot Transistor
Vacuum channel transistor.